China Igbt In Power Electronics 52MT120KB 52MT140KB 60MT100KB 60MT120KB 1200V 50A

Igbt In Power Electronics 52MT120KB 52MT140KB 60MT100KB 60MT120KB 1200V 50A

TYPE: 52MT120KB
IO: 50A
VRRM: 1200V
China 50RIA160M 50RIA120 50RIA120S90 Igbt Module 1600V 50A TO 208AC TO 65

50RIA160M 50RIA120 50RIA120S90 Igbt Module 1600V 50A TO 208AC TO 65

TYPE: 50RIA160M
IO: 50A
VRRM: 1600V
China 1200 Volt 150A IGBT Power Module 5MA120 45MA40 45MA60 45MA80 45MA100

1200 Volt 150A IGBT Power Module 5MA120 45MA40 45MA60 45MA80 45MA100

TYPE: 45MA120
IO: 150A
VRRM: 1200V
China 44A717067 IGBT Power Module 100V IR 40A 44A717067 Type High Efficiency

44A717067 IGBT Power Module 100V IR 40A 44A717067 Type High Efficiency

TYPE: 44A717067
IO: 40A
VRRM: 100V
China 40HFR20 40HFR120 40HFR160 IGBT Power Module / Bridge Transistor 200V 40A DO-5 DO-203AB

40HFR20 40HFR120 40HFR160 IGBT Power Module / Bridge Transistor 200V 40A DO-5 DO-203AB

TYPE: 40HF20
IO: 40A
VRRM: 200V
China 36MB120 1P 1.2KV 35A D-34 IGBT Power Module / Igbt Bipolar VS-36MB120 VS36MB120 36MB120A

36MB120 1P 1.2KV 35A D-34 IGBT Power Module / Igbt Bipolar VS-36MB120 VS36MB120 36MB120A

TYPE: 36MB120
IO: 36A
VRRM: 1200V
China High Power Igbt Module 30L6P45 30L6P44 30U6P45 20L6P45 30Q6P45 TOSHIBA

High Power Igbt Module 30L6P45 30L6P44 30U6P45 20L6P45 30Q6P45 TOSHIBA

TYPE: 30L6P45
BRAND: TOSHIBA
Packaging Details: Module with Box
China 30GG2Z11 IGBT Power Module /  TOSHIBA Insulated Gate Bipolar Transistor

30GG2Z11 IGBT Power Module / TOSHIBA Insulated Gate Bipolar Transistor

TYPE: 30GG2Z11
BRAND: TOSHIBA
Packaging Details: Module with Box
China 26MT160 26MT120 36MT120 High Power Igbt 3P 1.6KV 25A D-63 VS-26MT160

26MT160 26MT120 36MT120 High Power Igbt 3P 1.6KV 25A D-63 VS-26MT160

TYPE: 26MT160
BRAND: IR
Voltage: 1.6KV
China 25j4b42 Igbt Power Module Silicon Diffused Type Rectifier Stack 600v 25a Case 12-35e1a

25j4b42 Igbt Power Module Silicon Diffused Type Rectifier Stack 600v 25a Case 12-35e1a

TYPE: 25J4B42
BRAND: TOSHIBA
Voltage: 600V
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